? ? ? ? guilin strong micro-electronics co.,ltd. gm d596 features c npn low frequency amplifier transistor maximum ratings (t a =25 ) ~? characteristic ? symbol ? rating ~? unit collector-base voltage ?O - O? v cbo 3 0 v collector-emitter voltage ?O - lO? v ceo 25 v emitter-base voltage lO - O? v ebo 5 v collector current-continuous ?O - Bm ic 70 0 ma collector power dissipation ?O? p c 225 mw junction temperature Y t j 150 storage temperature range ? t stg -55 ? 150 device marking gm d596(2sd596) mark dv1 dv2 dv3 dv4 dv5 h fe 1 110~180 135~220 170~270 200~320 250~400
? ? ? ? guilin strong micro-electronics co.,ltd. g md596 electrical characteristics (t a =25 unless otherwise noted of , ?? 25 ) characteristic ? symbol ? test condition y?l min ? t yp ? max ? unit collector cutoff current ?O? i cbo v cb = 3 0v, i e =0 0.1 a emitter cutoff current lO? i ebo v eb =5v, i c =0 0.1 a collector-base breakdown voltage ?O - O? v (br)cbo i c =100 a 3 0 v collector-emitter breakdown voltage ?O - lO? v (br)ceo i c =1.0ma 25 v emitter-base breakdown vol t age lO - O? v (br)ebo i e =100 a 5 v dc current gain ? h fe 1 v ce = 1 v, i c = 100 ma 11 0 200 4 00 dc current gain ? h fe 2 v ce = 1 v, i c = 700 ma 5 0 collector-emitter saturation voltage ?O - lO?? v ce(sat) i c = 7 00ma, i b = 7 0ma 0.2 0. 6 v base-emitter saturation voltage O - lO?? v b e(sat) i c = 7 00ma, i b = 7 0ma 1.0 1.2 v base-emitter saturation O - lO? v be v ce = 6 v, i c =10ma 0.6 0.64 0. 7 v transition frequency l f t v ce = 6 v, i c =10ma 1 7 0 mhz collector output capacitance ? c ob v cb = 6 v,i e =0, f=1mhz 12 pf
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